XPDV4120R
Description
The XPDV4120R comprises an optimised 100 GHz waveguide-integrated photodiode, which shows an extremely flat frequency response, both in power and in phase. u²t's on-chip integrated bias network with an optimised RF design in particular ensures an undisturbed frequency response from DC to the 3 dB cut-off frequency and saves costs for internal bias-tees. The module is especially designed for optimal RF performance, therefore the pulse response reveals virtually no ringing. A further advantage of the waveguide structure is the unbeatable high-power behaviour. The photodetector shows a linear response up to an optical input power of 10 dBm. An output voltage swing of more than 0.5 Vpp can be achieved for short pulses without any degradation of the pulse response. Each photodetector module is characterised in the requency domain by using a heterodyne technique. In the time domain, a femtosecond pulse source and a 65 GHz sampling oscilloscope are used to measure the pulse response.
Features
- 90 GHz electrical 3dB bandwidth
- Flat response of up to 100 GHz
- Excellent pulse behaviour
- Well matched 50 Ohm output
Applications
- High-speed lightwave characterisation
- 100 Gbit/s communication systems
- Microwave photonics
Datasheet
